Gunn oscillations in planar heterostructure diodes

Pilgrim, N.J., Khalid, A. , Dunn, G.M. and Cumming, D.R.S. (2008) Gunn oscillations in planar heterostructure diodes. Semiconductor Science and Technology, 23(7), 075013. (doi:10.1088/0268-1242/23/7/075013)

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Publisher's URL: http://dx.doi.org/10.1088/0268-1242/23/7/075013

Abstract

Gunn oscillations have been observed and modelled, using a Monte Carlo method, in planar semiconductor GaAs/AlGaAs heterostructure diodes. Our simulation results support an interpretation of experimental results whereby the Gunn domains travel parallel to the semiconductor layers, as opposed to perpendicular to the layers in traditional vertical devices. Fabricated devices with contact separations of 4 mu m down to 1.3 mu m have been found to oscillate over a range of frequencies from 24.5 GHz to 108 GHz. These structures offer the prospect of generating frequencies further into the terahertz range and an increased ease of integration and flexibility over equivalent traditional vertical structures

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Cumming, Professor David and Khalid, Dr Ata-ul-Habib
Authors: Pilgrim, N.J., Khalid, A., Dunn, G.M., and Cumming, D.R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Semiconductor Science and Technology
Journal Abbr.:Semicond. sci. technol.
ISSN:0268-1242

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