Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations

Riddet, C., Brown, A. R., Roy, S. and Asenov, A. (2008) Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations. Journal of Computational Electronics, 7(3), pp. 231-235. (doi:10.1007/s10825-008-0222-6)

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Publisher's URL: http://dx.doi.org/10.1007/s10825-008-0222-6

Abstract

Monte Carlo remains an effective simulations methodology for the study of MOSFET devices well into the decananometre regime as it captures non-equilibrium and quasi-ballistic transport. The inclusion of quantum corrections further extends the usefulness of this technique without adding significant computational cost. In this paper we examine the impact of boundary conditions at the Ohmic contacts when Density Gradient based quantum corrections are implemented in a 3D Monte Carlo simulator. We show that Neumann boundary conditions lead to more stable and physically correct simulation results compared to the traditional use of Dirichlet boundary conditions.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Brown, Mr Andrew and Roy, Professor Scott and Asenov, Professor Asen and Riddet, Mr Craig
Authors: Riddet, C., Brown, A. R., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Computational Electronics
Publisher:Springer US
ISSN:1569-8025
ISSN (Online):1572-8137

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
467281Renaissance GermaniumAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/F032633/1Electronic and Nanoscale Engineering