Riddet, C., Brown, A. R., Roy, S. and Asenov, A. (2008) Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations. Journal of Computational Electronics, 7(3), pp. 231-235. (doi: 10.1007/s10825-008-0222-6)
Full text not currently available from Enlighten.
Publisher's URL: http://dx.doi.org/10.1007/s10825-008-0222-6
Abstract
Monte Carlo remains an effective simulations methodology for the study of MOSFET devices well into the decananometre regime as it captures non-equilibrium and quasi-ballistic transport. The inclusion of quantum corrections further extends the usefulness of this technique without adding significant computational cost. In this paper we examine the impact of boundary conditions at the Ohmic contacts when Density Gradient based quantum corrections are implemented in a 3D Monte Carlo simulator. We show that Neumann boundary conditions lead to more stable and physically correct simulation results compared to the traditional use of Dirichlet boundary conditions.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Brown, Mr Andrew and Roy, Professor Scott and Asenov, Professor Asen and Riddet, Mr Craig |
| Authors: | Riddet, C., Brown, A. R., Roy, S., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Computational Electronics |
| Publisher: | Springer US |
| ISSN: | 1569-8025 |
| ISSN (Online): | 1572-8137 |
University Staff: Request a correction | Enlighten Editors: Update this record
Altmetric
Altmetric