Thayne, I. G. , Hill, R. J. W., Moran, D.A.J., Kalna, K., Asenov, A. and Passlack, M. (2008) Comments on "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm". IEEE Electron Device Letters, 29(10), pp. 1085-1086. (doi: 10.1109/LED.2008.2002752)
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Publisher's URL: http://dx.doi.org/10.1109/LED.2008.2002752
Abstract
We have a number of issues with the above paper "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Current Exceeding 1 A/mm," by Y. Xuan, Y. Q. Wu, and P. D. Ye, published IEEE ELECTRON DEVICE LETTERS in April 2008 which we wish to highlight
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Hill, Mr Richard and Asenov, Professor Asen and Kalna, Dr Karol |
Authors: | Thayne, I. G., Hill, R. J. W., Moran, D.A.J., Kalna, K., Asenov, A., and Passlack, M. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Electron Device Letters |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0741-3106 |
ISSN (Online): | 1558-0563 |
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