Comments on "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm"

Thayne, I. G. , Hill, R. J. W., Moran, D.A.J., Kalna, K., Asenov, A. and Passlack, M. (2008) Comments on "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm". IEEE Electron Device Letters, 29(10), pp. 1085-1086. (doi:10.1109/LED.2008.2002752)

Thayne, I. G. , Hill, R. J. W., Moran, D.A.J., Kalna, K., Asenov, A. and Passlack, M. (2008) Comments on "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm". IEEE Electron Device Letters, 29(10), pp. 1085-1086. (doi:10.1109/LED.2008.2002752)

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Publisher's URL: http://dx.doi.org/10.1109/LED.2008.2002752

Abstract

We have a number of issues with the above paper "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Current Exceeding 1 A/mm," by Y. Xuan, Y. Q. Wu, and P. D. Ye, published IEEE ELECTRON DEVICE LETTERS in April 2008 which we wish to highlight

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Hill, Mr Richard and Asenov, Professor Asen and Kalna, Dr Karol
Authors: Thayne, I. G., Hill, R. J. W., Moran, D.A.J., Kalna, K., Asenov, A., and Passlack, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0741-3106
ISSN (Online):1558-0563

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