High-power laser arrays with 100% fill factor emission facet - art. no. 69091B 39

Yanson, D. A., McDougall, S. D., Qiu, B., Loyo-Maldonado, V., Bacchin, G., Robertson, S., Bon, S. and Marsh, J. H. (2008) High-power laser arrays with 100% fill factor emission facet - art. no. 69091B 39. In: Belyanin, A.A. and Smowton, P.M. (eds.) Novel In-Plane Semiconductor Lasers VII. Series: Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE) (6909). SPIE: Bellingham, WA, B9091-B9091. ISBN 978-0-8194-7084-3

Abstract

Novel types of laser diode array with a 100% filling factor at the emission facet are reported. The arrays utilize both parallel and tapered cavity emitters that are connected via a common Laterally Unconfined Non-Absorbing Mirror (LUNAM) defined with quantum-well intermixing technology at 808 nm wavelength. Two LUNAM array types are considered: incoherent (weakly coupled) and coherent (diffraction coupled). Incoherent LUNAM arrays benefit from a reduced power density at the facet, improving reliability, and a near-uniform intensity distribution across the array aperture. Stacked laser diode arrays built with LUNAM bars deliver 950 W power under QCW operation with <5% degradation at 1.9 x 10(8) shots. Novel coherent arrays are realized using a monolithically integrated LUNAM Talbot cavity. The devices produce a single-lobed horizontal far-field pattern over a limited current range with <10% slope efficiency penalty compared to an uncoupled case. The LUNAM arrays are promising candidates for high-power, high-brightness and high-reliability operation

• Item Type: Book Sections
• Additional Information: Conference on Novel in-Plane Semiconductor Lasers VII San Jose, CA, JAN 21-24, 2008 Series ISSN: 0277-786X
• Keywords: 808 nm ARRAYS CAVITY coherent array DEVICE DEVICES DIODE-LASERS EFFICIENCY EMISSION high brightness high power laser high reliability laser array laser diode OPTICS PHASE-LOCKING POWER quantum-well intermixing semiconductor laser Talbot cavity tapered emitter
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John
• Authors: Yanson, D. A., McDougall, S. D., Qiu, B., Loyo-Maldonado, V., Bacchin, G., Robertson, S., Bon, S., and Marsh, J. H.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Novel In-Plane Semiconductor Lasers VII
• Publisher: SPIE
• ISSN: 0277-786X
• ISBN: 978-0-8194-7084-3