Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors

Oxland, R.K., Paterson, G.W. , Long, A.R. and Rahman, F. (2010) Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors. Solid-State Electronics, 54(4), pp. 427-432. (doi:10.1016/j.sse.2009.11.008)

Oxland, R.K., Paterson, G.W. , Long, A.R. and Rahman, F. (2010) Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors. Solid-State Electronics, 54(4), pp. 427-432. (doi:10.1016/j.sse.2009.11.008)

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Abstract

The behaviour of an InP/InGaAs heterojunction bipolar transistor stack in a magnetic field is described here with reference to various surface modifications. These include surface passivation with sulphur-based species, surface amorphisation with plasma-induced ion bombardment and inclusion of three-dimensional ferromagnetic thin-film structures on the surface of the device. The structure, fabrication and modelling of the device is described in brief, followed by the results of transport and transduction experiments on the hybrid ferromagnet-bipolar transistor device. The results clearly show the important role played by surface conditions on surface and near-surface electron interactions brought about by Lorentz deflection of transport current in bipolar transistors and the potential for using these effects to measure the strength of magnetic fields. A new type of compound semiconductor integrated ferromagnet-bipolar transistor magnetic field sensor, based on these processes, is presented.

Item Type:Articles
Keywords:Bases, device, electron-transport, fabrication, ferromagnet-semiconductor hybrid device, fields, heterojunction bipolar transistor, magnetometer, magnetotransport measurements, passivation, physics, solid-state sensor, surface passivation, transistors, transport
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Long, Professor Andrew and Paterson, Dr Gary and Rahman, Dr Faiz and Oxland, Dr Richard
Authors: Oxland, R.K., Paterson, G.W., Long, A.R., and Rahman, F.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Solid-State Electronics
ISSN:0038-1101
ISSN (Online):1879-2405
Published Online:21 December 2009

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