Terahertz dual-band resonator on silicon

Ma, Y., Chen, Q., Khalid, A.H. , Saha, S.C. and Cumming, D. R. S. (2010) Terahertz dual-band resonator on silicon. Optics Letters, 35(4), pp. 469-471. (doi:10.1364/OL.35.000469)

Full text not currently available from Enlighten.

Abstract

We have designed and fabricated a dual-band resonator in the terahertz frequency range on high-resistivity silicon. The device is designed to show resonances at 2.6 and 4.3 THz using the finite-difference time-domain modeling method. The characteristics of the fabricated device have been examined by using a Fourier-transform IR spectrometer. Measured results are in excellent agreement with the simulated data, showing two polarization-independent resonant peaks observed at 2.60 and 4.37 THz, respectively. The first resonance has a bandwidth of 0.56 THz, while the second one has a bandwidth of 0.70 THz. These dual-band resonant devices can be used for various applications such as dual-band spectral imaging and multiband biosensors.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Saha, Dr Shimul and Ma, Mr Yong and Cumming, Professor David and Chen, Dr Qin and Khalid, Dr Ata-ul-Habib
Authors: Ma, Y., Chen, Q., Khalid, A.H., Saha, S.C., and Cumming, D. R. S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Optics Letters
ISSN:0146-9592
ISSN (Online):1539-4794

University Staff: Request a correction | Enlighten Editors: Update this record