Ma, Y., Chen, Q., Khalid, A.H. , Saha, S.C. and Cumming, D. R. S. (2010) Terahertz dual-band resonator on silicon. Optics Letters, 35(4), pp. 469-471. (doi: 10.1364/OL.35.000469)
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Abstract
We have designed and fabricated a dual-band resonator in the terahertz frequency range on high-resistivity silicon. The device is designed to show resonances at 2.6 and 4.3 THz using the finite-difference time-domain modeling method. The characteristics of the fabricated device have been examined by using a Fourier-transform IR spectrometer. Measured results are in excellent agreement with the simulated data, showing two polarization-independent resonant peaks observed at 2.60 and 4.37 THz, respectively. The first resonance has a bandwidth of 0.56 THz, while the second one has a bandwidth of 0.70 THz. These dual-band resonant devices can be used for various applications such as dual-band spectral imaging and multiband biosensors.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Saha, Dr Shimul and Ma, Mr Yong and Cumming, Professor David and Chen, Dr Qin and Khalid, Dr Ata-Ul-Habib |
| Authors: | Ma, Y., Chen, Q., Khalid, A.H., Saha, S.C., and Cumming, D. R. S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Optics Letters |
| ISSN: | 0146-9592 |
| ISSN (Online): | 1539-4794 |
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