Statistical enhancement of combined simulations of RDD and LER variability: what can simulation of a 105 sample teach us?

Reid, D., Millar, C., Roy, G., Roy, S. and Asenov, A. (2009) Statistical enhancement of combined simulations of RDD and LER variability: what can simulation of a 105 sample teach us? In: Proceedings of the 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, USA, 7-9 December 2009. IEEE Computer Society, pp. 657-660. ISBN 9781424456390 (doi:10.1109/IEDM.2009.5424241)

Full text not currently available from Enlighten.

Abstract

Using 3D simulations of statistical ensembles of unprecedented size, we have studied statistical threshold voltage variations induced by the combined effects of random dopants and line edge roughness in a state of the art 35 nm MOSFET. Statistical samples of 10<sup>5</sup> microscopically different transistors have been simulated. Based on careful statistical analysis of the simulation results we have developed statistical enhancement techniques, which deliver a high degree of statistical accuracy at a greatly reduced computational cost.

Item Type:Book Sections
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Millar, Dr Campbell and Roy, Dr Gareth and Asenov, Professor Asen and Roy, Professor Scott
Authors: Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE Computer Society
ISBN:9781424456390

University Staff: Request a correction | Enlighten Editors: Update this record