Simulation of statistical aspects of charge trapping and related degradation in bulk MOSFETs in the presence of random discrete dopants

Bukhori, M.F., Roy, S. and Asenov, A. (2010) Simulation of statistical aspects of charge trapping and related degradation in bulk MOSFETs in the presence of random discrete dopants. IEEE Transactions on Electron Devices, 57(4), pp. 795-803. (doi: 10.1109/TED.2010.2041859)

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Abstract

The distribution of fractional current change and threshold voltage shift in an ensemble of realistic 35 nm bulk negative-channel metal-oxide-semiconductor field-effect transistors caused by charge trapping on stress-generated defect states at the Si/SiO2 interface is studied using 3-D statistical "atomistic" simulations. The simulations take into account the underlying random discrete dopant distribution in the transistors, which in conjunction with strategically positioned traps could result in rare but dramatic changes in the transistor characteristics. The evolution of threshold voltage distribution as a result of accumulation of trapped charges in the devices due to progressive negative bias temperature instability, positive bias temperature instability, or hot electron degradation is simulated and compared with simple analytical model predictions and recently published experimental measurements to demonstrate the necessity to consider statistical variability in realistic reliability simulations. The magnitude of the degradation in devices of different geometries is also investigated where minimal correlation is found.

Item Type:Articles
Keywords:Bias temperature instability, cmos, decananometer mosfets, device, devices, field-effect transistors, impact, intrinsic parameter fluctuations, model, mos-transistors, mosfet, mosfets, nano-mosfets, noise, numerical simulation, physics, random dopants, random telegraph signal, random telegraph signal (rts), reliability, simulation, statistical variability, threshold, transistor, transistors, variability
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Roy, Professor Scott
Authors: Bukhori, M.F., Roy, S., and Asenov, A.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
ISSN:0018-9383
ISSN (Online):1557-9646
Published Online:22 February 2010

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
443791Atomic scale simulation of nanoelectronic devicesAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/E038344/1Electronic and Nanoscale Engineering