Semiconductor snail lasers

Strain, M.J., Mezosi, G., Javaloyes, J., Sorel, M., Perez-Serrano, A., Scire, A., Balle, S., Danckaert, J. and Verschaffelt, G. (2010) Semiconductor snail lasers. Applied Physics Letters, 96(12), p. 121105. (doi:10.1063/1.3371721)

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Abstract

A modified ring laser geometry is presented to promote stable unidirectional lasing. The effects of directional coupling and facet reflectivities are investigated with respect to quantum efficiency, directionality, and side-mode suppression ratio of the lasing spectra. Simulation and experimental results are presented showing single mode (>20 dB side-mode suppression ratio), unidirectional lasing on an InP based multiple quantum well material.

Item Type:Articles
Keywords:Efficiency, iii-v semiconductors, indium compounds, laser modes, laser stability, physics, quantum well lasers, ratio, reflectivity, ring lasers, simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Mezosi, Mr Gabor and Javaloyes, Dr Julien and Sorel, Professor Marc and Strain, Dr Michael
Authors: Strain, M.J., Mezosi, G., Javaloyes, J., Sorel, M., Perez-Serrano, A., Scire, A., Balle, S., Danckaert, J., and Verschaffelt, G.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Journal Abbr.:Appl. Phys. Lett.
ISSN:0003-6951
ISSN (Online):1077-3118
Published Online:25 March 2010

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