Azam, T., Cheng, B., Roy, S. and Cumming, D.R.S. (2010) Robust asymmetric 6T-SRAM cell for low-power operation in nano-CMOS technologies. Electronics Letters, 46(4), pp. 273-274. (doi: 10.1049/el.2010.2817)
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Abstract
An asymmetric 6T-SRAM cell design is presented for reliable lowpower circuit operation under large variability. A low overhead write assist circuit is added to increase the write-noise-margin (WNM) and improve the write speed/power. Sizing is used to strengthen the pull-down transistor of the feedback inverter of the single ended read circuit to enhance the static-noise-margin (SNM). Monte Carlo simulations indicate a 90% improvement in SNM and a boost in the WNM of 108% compared to the conventional 6T-SRAM design. Comparative analysis of a 65nm 64 x 32 bit SRAM designed using both SRAM cells (Symmetric-6T and Asymmetric-6T) shows the write delay and power decrease by 46% and 35%, respectively, while total power decreases by 52% using the proposed design.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Cumming, Professor David and Cheng, Dr Binjie and Roy, Professor Scott |
| Authors: | Azam, T., Cheng, B., Roy, S., and Cumming, D.R.S. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Journal Abbr.: | Electron. lett. |
| Publisher: | The Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
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