Review of current status of III-V MOSFETs

Thayne, I.G. et al. (2009) Review of current status of III-V MOSFETs. ECS Transactions, 19(5), pp. 275-286. (doi:10.1149/1.3119552)

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Abstract

To address issues associated with continual scaling of the International Technology Roadmap for Semiconductors (ITRS) (1) to follow Moore's Law, MOSFETs with high mobility channel materials are now being seriously considered. As a result, there has been a significant expansion in research into HI-V MOSFETs as a potential n-channel device solution. A wide range of high electron mobility channel materials, device architectures and gate oxides are currently being considered, and in this review, key performance metrics of III-V MOSFETs will be compared.

Item Type:Articles
Additional Information:Paper presented at 1st International Symposium on Emerging Materials for Post-CMOS Applications held at the 215th Meeting of the Electrochemical-Society, San Francisco, CA, USA, 25-29 May 2009.
Keywords:Channel, density, deposition, device, devices, field-effect transistor, gaas, mobility, mosfet, mosfets, performance, semiconductor, technologies, technology, transconductance
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Zhou, Dr Haiping and Macintyre, Dr Douglas and Thayne, Professor Iain and Thoms, Dr Stephen and Asenov, Professor Asen and Hill, Mr Richard and Stanley, Professor Colin and Kalna, Dr Karol and Holland, Dr Martin
Authors: Thayne, I.G., Hill, R.J.W., Holland, M.C., Li, X., Zhou, H., Macintyre, D.S., Thoms, S., Kalna, K., Stanley, C.R., Asenov, A., Droopad, R., and Passlack, M.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:ECS Transactions
ISSN:1938-5862
ISSN (Online):1938-6737

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