Observation of multiple domains in a planar Gunn diode

Khalid, A. , Li, C., Dunn, G., Pilgrim, N. and Cumming, D.R.S. (2009) Observation of multiple domains in a planar Gunn diode. In: EuMC 2009: European Microwave Conference: 28 September - 2 October 2009, Rome, Italy. IEEE Computer Society: Piscataway, N.J., USA, pp. 298-300. ISBN 9781424447497

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We have observed multiple oscillations in a planar Gunn diode fabricated using an AlGaAs/GaAs based quantum well structure. The material used was grown by molecular beam epitaxy and devices were made using electron beam lithography. The devices had a 4 mu m cathode-anode distance and 60 mu m width. They showed multiple oscillations at 29GHz, 33GHz and 35GHz. This is the first observation of multiple frequencies in a planar quantum well structure device and may have applications as a single chip multi-frequency source.

Item Type:Book Sections
Glasgow Author(s) Enlighten ID:Li, Dr Chong and Cumming, Professor David and Khalid, Dr Ata-Ul-Habib
Authors: Khalid, A., Li, C., Dunn, G., Pilgrim, N., and Cumming, D.R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE Computer Society

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