Novel planar Gunn diode operating in fundamental mode up to 158 GHz

Li, C., Khalid, A. , Pilgrim, N., Holland, M.C., Dunn, G. and Cumming, D.R.S. (2009) Novel planar Gunn diode operating in fundamental mode up to 158 GHz. Journal of Physics: Conference Series, 193(1), 012029. (doi: 10.1088/1742-6596/193/1/012029)

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We show the experimental realisation of fundamental mode operation of planar Gunn diode structures fabricated in GaAs/AlGaAs quantum wells. The electron density in the active channel is enhanced by positioning double delta-doping layers on either side. Small signal measurement shows that a typical device exhibits negative resistance up to 158 GHz. Using this device structure we have demonstrated a planar Gunn oscillator working at 115.5 GHz with an output power of -28 dBm.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Li, Dr Chong and Cumming, Professor David and Khalid, Dr Ata-Ul-Habib and Holland, Dr Martin
Authors: Li, C., Khalid, A., Pilgrim, N., Holland, M.C., Dunn, G., and Cumming, D.R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Physics: Conference Series
ISSN (Online):1742-6596

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