Multiple plasmon resonances at terahertz frequencies from arrays of arsenic doped silicon dots

Shi, X.H., Cleary, A., Khalid, A. and Cumming, D.R.S. (2009) Multiple plasmon resonances at terahertz frequencies from arrays of arsenic doped silicon dots. Microelectronic Engineering, 86(4-6), pp. 1111-1113. (doi:10.1016/j.mee.2008.12.070)

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Abstract

Heavily doped silicon dots arrays have been fabricated and measured to investigate their resonance characteristics in the terahertz range. Multiple plasmon resonances have been observed for arrays of dots with different dimensions. The observed phenomenon provides evidence of the existence of bulk plasmon resonance of heavily doped silicon dots arrays at terahertz frequencies, and will have applications in the design of quasi-optical components.

Item Type:Articles
Additional Information:MNE ’08 - The 34th International Conference on Micro- and Nano-Engineering (MNE)
Keywords:Arrays, components, design, doped silicon dots arrays, engineering, frequencies, optics, physics, plasmon resonances, resonances, science, silicon, terahertz, terahertz frequencies
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Cumming, Professor David and Khalid, Dr Ata-ul-Habib and Shi, Mr Xiaohua
Authors: Shi, X.H., Cleary, A., Khalid, A., and Cumming, D.R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronic Engineering
ISSN:0167-9317
Published Online:01 January 2009

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