Multiple plasmon resonances at terahertz frequencies from arrays of arsenic doped silicon dots

Shi, X.H., Cleary, A., Khalid, A. and Cumming, D.R.S. (2009) Multiple plasmon resonances at terahertz frequencies from arrays of arsenic doped silicon dots. Microelectronic Engineering, 86(4-6), pp. 1111-1113. (doi: 10.1016/j.mee.2008.12.070)

Abstract

Heavily doped silicon dots arrays have been fabricated and measured to investigate their resonance characteristics in the terahertz range. Multiple plasmon resonances have been observed for arrays of dots with different dimensions. The observed phenomenon provides evidence of the existence of bulk plasmon resonance of heavily doped silicon dots arrays at terahertz frequencies, and will have applications in the design of quasi-optical components.

• Item Type: Articles
• Additional Information: MNE ’08 - The 34th International Conference on Micro- and Nano-Engineering (MNE)
• Keywords: Arrays, components, design, doped silicon dots arrays, engineering, frequencies, optics, physics, plasmon resonances, resonances, science, silicon, terahertz, terahertz frequencies
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Cumming, Professor David and Khalid, Dr Ata-Ul-Habib and Shi, Mr Xiaohua
• Authors: Shi, X.H., Cleary, A., Khalid, A., and Cumming, D.R.S.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Microelectronic Engineering
• ISSN: 0167-9317
• Published Online: 01 January 2009