Magnetotransport characterization of surface-treated InP/InGaAs heterojunction bipolar transistors

Oxland, R.K., Long, A.R. and Rahman, F. (2009) Magnetotransport characterization of surface-treated InP/InGaAs heterojunction bipolar transistors. Microelectronic Engineering, 86(12), pp. 2432-2436. (doi:10.1016/j.mee.2009.05.007)

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The results of surface modification induced effects on InP/InGaAs single heterojunction bipolar transistors, as revealed by magnetotransport experiments, are described here. The surface treatments included both sulphur-based surface passivation and ion bombardment-induced surface damage. The former is known to improve device characteristics and the latter to degrade device operation. In this work the aim was to assess these techniques for tailoring device performance for surface sensing applications. Device characteristics were found to be sensitive to surface preparation prior to measurements. Measurements revealed that surface treatments that improve device performance also reduce sensitivity to external magnetic fields while treatments that degrade performance make devices more sensitive to externally applied magnetic fields.

Item Type:Articles
Keywords:Damage, device, device encapsulation, devices, electron-transport, engineering Fields, heterojunction bipolar transistor, inductively-coupled plasma, ingap, inp-based, hbts, magnetotransport measurements, passivation, performance, physics, science, semiconductor sensor, surface passivation, transistor, transistor characteristics, transistors
Glasgow Author(s) Enlighten ID:Rahman, Dr Faiz and Oxland, Dr Richard and Long, Professor Andrew
Authors: Oxland, R.K., Long, A.R., and Rahman, F.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronic Engineering
Published Online:18 May 2009

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