Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures

Benbakhti, B., Ayubi-Moak, J.S., Kalna, K., Lin, D., Hellings, G., Brammertz, G., De Meyer, K., Thayne, I.G. and Asenov, A. (2010) Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. Microelectronics Reliability, 50(3), pp. 360-364. (doi:10.1016/j.microrel.2009.11.017)

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Abstract

The effect of interface state trap density, D-it, on the current-voltage characteristics of four recently proposed III-V MOSFET architectures: a surface channel device, a flat-band implant-free HEMT-like device with delta-doping below the channel, a buried channel design with delta-doping, and implant-free quantum-well HEMT-like structure with no delta-doping, has been investigated using TCAD simulation tools. We have developed a methodology to include arbitrary energy distributions of interface states into the input simulation decks and analysed their impact on subthreshold characteristics and drive current. The distributions of interface states having high density tails that extend to the conduction band can significantly impact the subthreshold performance in both the surface channel design and the implant-free quantum-well HEMT-like structure with no delta-doping. Furthermore, the same distributions have little or no impact on the performance of both flat-band implant-free and buried channel architectures which operate around the midgap.

Item Type:Articles
Keywords:Benchmarking, channel, design, device, dielectrics, enhancement-mode, gaas, impact, mobility, MOSFET, physics, simulation, transistor
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Asenov, Professor Asen and Benbakhti, Dr Brahim and Ayubi-Moak, Mr Jason and Kalna, Dr Karol
Authors: Benbakhti, B., Ayubi-Moak, J.S., Kalna, K., Lin, D., Hellings, G., Brammertz, G., De Meyer, K., Thayne, I.G., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronics Reliability
ISSN:0026-2714
ISSN (Online):1872-941X
Published Online:21 December 2009

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