Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors

Li, X. , Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S., Macintyre, D.S. and Thayne, I.G. (2009) Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(6), pp. 3153-3157. (doi:10.1116/1.3256624)

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Abstract

This article describes a process flow that has enabled the first demonstration of functional, fully self-aligned 100 nm enhancement mode GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with GaxGdyOz as high-kappa dielectric, Pt/W as metal gate stack, and SiN as sidewall spacers. The flow uses blanket metal and dielectric deposition and low damage dry etch modules. As a consequence, no critical dimension lift-off processes are required. Encouraging data are presented for 100 nm gate length devices including threshold voltage of 0.32 V, making these the shortest, fully self-aligned gate length enhancement mode III-V MOSFETs reported to date. This work is a significant step forward to the demonstration of high performance "siliconlike" III-V MOSFETs.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Longo, Dr Paolo and Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Macintyre, Dr Douglas and Thoms, Dr Stephen and Hill, Mr Richard and Holland, Dr Martin
Authors: Li, X., Hill, R.J.W., Longo, P., Holland, M.C., Zhou, H., Thoms, S., Macintyre, D.S., and Thayne, I.G.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN:1071-1023
ISSN (Online):1520-8567

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
452481Silicon compatible process modules for III-V electronic devices.Iain ThayneEngineering & Physical Sciences Research Council (EPSRC)EP/F002610/1Electronic and Nanoscale Engineering