Longo, P., Scott, J. , Craven, A.J., Hill, R.J.W. and Thayne, I.G. (2008) EFTEM and EELS SI: tools for investigating the effects of etching processes for III-V MOSFET devices. Journal of Physics: Conference Series, 126(1), 012053. (doi: 10.1088/1742-6596/126/1/012053)
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Abstract
High quality oxides layers are now available for MOSFETs on GaAs. For successful devices, suitable process schemes are required. In this paper we show an investigation of an etching process on a GaAs/Ga2O3/GGO dielectric gate stack. This investigation has been carried out using EFTEM and EELS SI. EFTEM provides a quick analysis on the structure while EELS SI offers much better resolution and the possibility to quantitatively characterize the material.
| Item Type: | Articles |
|---|---|
| Keywords: | Device, devices, EELS, electron-microscopy, England, etching, GaAs, layer, layers, microscopy, MOSFET, MOSFETS, oxide, physics, resolution, science, SI |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Longo, Dr Paolo and Scott, Dr Jamie and Hill, Mr Richard and Craven, Professor Alan |
| Authors: | Longo, P., Scott, J., Craven, A.J., Hill, R.J.W., and Thayne, I.G. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Physics and Astronomy |
| Journal Name: | Journal of Physics: Conference Series |
| ISSN: | 1742-6588 |
| ISSN (Online): | 1742-6596 |
| ISBN: | 1742-6588 |
| Published Online: | 25 September 2008 |
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