Ayubi-Moak, J.S., Benbakhti, B., Kalna, K., Paterson, G.W. , Hill, R., Passlack, M., Thayne, I.G. and Asenov, A. (2009) Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs. Microelectronic Engineering, 86(7-9), pp. 1564-1567. (doi: 10.1016/j.mee.2009.03.024)
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Abstract
The effect of interface state trap density, D-it, on the device characteristics of n-type, enhancement-mode, implant-free (IF) In0.3Ga0.7As MOSFETs [1,2] has been investigated using a commercial drift-diffusion (DD) device simulation tool. Methodology has been developed to include arbitrary D-it, distributions in the input simulation decks to more accurately fit the measured subthreshold characteristics of recently reported 1.0 mu m gate length IF In0.3Ga0.7As MOSFETs [3]. The impact of interface states on a scaled 30 nm gate length IF MOSFET is also reported.
Item Type: | Articles |
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Keywords: | Density, device, drift-diffusion, engineering, enhancement-mode, Gaas, Iii-V mosfets, impact, interface state trap density, mobility, mosfet, mosfets, physics, science, simulation |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Paterson, Dr Gary and Hill, Mr Richard and Ayubi-Moak, Mr Jason and Asenov, Professor Asen and Benbakhti, Dr Brahim and Kalna, Dr Karol |
Authors: | Ayubi-Moak, J.S., Benbakhti, B., Kalna, K., Paterson, G.W., Hill, R., Passlack, M., Thayne, I.G., and Asenov, A. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Physics and Astronomy |
Journal Name: | Microelectronic Engineering |
Publisher: | Elsevier |
ISSN: | 0167-9317 |
ISSN (Online): | 1873-5568 |
Published Online: | 11 March 2009 |
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