Dry etching device quality high-kappa GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs

Li, X. , Zhou, H., Hill, R.J.W., Longo, P., Holland, M. and Thayne, I.G. (2010) Dry etching device quality high-kappa GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs. Microelectronic Engineering, 87(5-8), pp. 1587-1589. (doi:10.1016/j.mee.2009.11.011)

Full text not currently available from Enlighten.

Abstract

This paper investigates the reactive ion etching (RIE) of GaxGdyOz a device quality high-kappa gate oxide for a low resistance ohmic contact realisation in fabricating III-V metal-oxide semiconductor field-effect-transistors (MOSFETs) based on high mobility channel device layer structures. The etching of GaxGdyOz (GGO) was performed in an Oxford Instrument PlasmaLab System 100 RIE etcher with a SiCl4 based chemistry. The GGO high-kappa gate stacks for GaAs MOSFETs were grown by Molecular Beam Epitaxy (MBE) in a dual-chamber system. Etching profile was characterised by AFM, SEM and TEM methods. The effects of usual etching conditions, such as RF power and chamber pressure on etch process were investigated. Based on the etching process, a low resistance ohmic contact has been realised as well, which has successfully been used in the fabrication of GaAs MOSFETs.

Item Type:Articles
Additional Information:Paper presented at The 35th International Conference on Micro- and Nano-Engineering (MNE 2008), Ghent Belgium, 28 Sep – 1 Oct 2009.
Keywords:Channel, device, dry etching, fabrication, Ga2o3-Gd2o3, GAAS, GAAS MOSFET, gaxgdyoz, high-kappa oxide, MOSFET, MOSFETS, physics, RIE SiCl4
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Longo, Dr Paolo and Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Holland, Dr Martin
Authors: Li, X., Zhou, H., Hill, R.J.W., Longo, P., Holland, M., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronic Engineering
Publisher:Elsevier Science
ISSN:0167-9317
Published Online:10 November 2009

University Staff: Request a correction | Enlighten Editors: Update this record