Hwang, C.J., Chong, H.M.H., Holland, M., Thayne, I.G. and Elgaid, K. (2009) DC-35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications. Electronics Letters, 45(12), pp. 632-633. (doi: 10.1049/el.2009.0684)
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Publisher's URL: http://dx.doi.org/10.1049/el.2009.0684
Abstract
A broadband low-loss, ultra-low-power consumption transmit/ receive switch using high-performance 50 nm gate-length metamorphic high electron mobility transistors (MHEMTs) is presented. The single pole double throw (SPDT) monolithic switch utilises a drain contact electrode sharing concept using a two-finger MHEMT. An optimal gate width of the MHEMT was chosen for low-loss, high-isolation performance and circuit compactness. The switch shows a broadband operation from DC to 35 GHz with insertion loss less than 1.9 dB, isolation better than 27 dB, and P-1dB better than 12 dBm with DC power consumption of less than 6 mu W
Item Type: | Articles |
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Keywords: | Engineering, England, HEMTS, high electron mobility transistors, mobility, operation, performance, technologies, technology, transistor, transistors |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Elgaid, Dr Khaled and Holland, Dr Martin |
Authors: | Hwang, C.J., Chong, H.M.H., Holland, M., Thayne, I.G., and Elgaid, K. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Electronics Letters |
Journal Abbr.: | Electron. lett. |
Publisher: | The Institution of Engineering & Technology |
ISSN: | 0013-5194 |
ISSN (Online): | 1350-911X |
Published Online: | 02 June 2009 |
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