Controlling third-order nonlinearities by ion-implantation quantum-well intermixing

Wagner, S.J., Holmes, B.M., Younis, U., Helmy, A.S., Hutchings, D.C. and Aitchison, J.S. (2009) Controlling third-order nonlinearities by ion-implantation quantum-well intermixing. IEEE Photonics Technology Letters, 21(1-4), pp. 85-87. (doi: 10.1109/LPT.2008.2008629)

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Abstract

The optical Kerr effect was measured by observing self-phase modulation in GaAs-AlGaAs superlattice-core waveguides modified by ion-implantation quantum-well intermixing. The band-gap energy was shifted by 68 nut for an implantation dose of 0.5 X 10(13) cm(-2) and annealing temperature of 775 degrees C. The Kerr effect was suppressed by up to 71% in the transverse-electric polarization after intermixing. A reduced polarization dependence of the self-phase modulation was observed after intermixing

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Younis, Mr Usman and Hutchings, Professor David and Holmes, Dr Barry
Authors: Wagner, S.J., Holmes, B.M., Younis, U., Helmy, A.S., Hutchings, D.C., and Aitchison, J.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Journal Abbr.:IEEE photonics technol. lett.
Publisher:IEEE
ISSN:1041-1135

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