Dylewicz, R., Lis, S., De La Rue, R.M. and Rahman, F. (2010) Charge dissipation layer based on conductive polymer for electron-beam patterning of bulk zinc oxide. Electronics Letters, 46(14), pp. 1025-1026. (doi: 10.1049/el.2010.1282)
Full text not currently available from Enlighten.
Abstract
The ability of thin conductive polythiophene layers to dissipate electrons in electron-beam lithography (EBL) process on bulk zinc oxide (ZnO) samples is shown. High energy electron-beam exposure of relatively thick (650 nm-thick) hydrogen silsesquioxane (HSQ) negative-type resist deposited on ZnO was investigated for three different cases. In turn, no charge dissipation layer, 40 nm-thick Al and 100 nm-thick conductive polymer layers were used on the top of HSQ resist. A quick and inexpensive processing method with the use of polymer is shown for an EBL exposure of dense and high-resolution patterns in HSQ/ZnO samples
Item Type: | Articles |
---|---|
Keywords: | Electron beam, lithography, ZnO |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | De La Rue, Professor Richard and Dylewicz, Dr Rafal and Rahman, Dr Faiz |
Authors: | Dylewicz, R., Lis, S., De La Rue, R.M., and Rahman, F. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Electronics Letters |
Journal Abbr.: | Electron. lett. |
Publisher: | The Institution of Engineering & Technology |
ISSN: | 0013-5194 |
ISSN (Online): | 1350-911X |
Published Online: | 06 July 2010 |
University Staff: Request a correction | Enlighten Editors: Update this record