Charge dissipation layer based on conductive polymer for electron-beam patterning of bulk zinc oxide

Dylewicz, R., Lis, S., De La Rue, R.M. and Rahman, F. (2010) Charge dissipation layer based on conductive polymer for electron-beam patterning of bulk zinc oxide. Electronics Letters, 46(14), pp. 1025-1026. (doi:10.1049/el.2010.1282)

Full text not currently available from Enlighten.

Abstract

The ability of thin conductive polythiophene layers to dissipate electrons in electron-beam lithography (EBL) process on bulk zinc oxide (ZnO) samples is shown. High energy electron-beam exposure of relatively thick (650 nm-thick) hydrogen silsesquioxane (HSQ) negative-type resist deposited on ZnO was investigated for three different cases. In turn, no charge dissipation layer, 40 nm-thick Al and 100 nm-thick conductive polymer layers were used on the top of HSQ resist. A quick and inexpensive processing method with the use of polymer is shown for an EBL exposure of dense and high-resolution patterns in HSQ/ZnO samples

Item Type:Articles
Keywords:Electron beam, lithography, ZnO
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Rahman, Dr Faiz and De La Rue, Professor Richard and Dylewicz, Dr Rafal
Authors: Dylewicz, R., Lis, S., De La Rue, R.M., and Rahman, F.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Journal Abbr.:Electron. lett.
Publisher:The Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X
Published Online:06 July 2010

University Staff: Request a correction | Enlighten Editors: Update this record