Characteristics of Gd-GaO grown by MBE

Holland, M., Longo, P., Paterson, G.W. , Reid, W., Long, A., Stanley, C.R., Craven, A.J., Thayne, I.G. and Gregory, R. (2009) Characteristics of Gd-GaO grown by MBE. Microelectronic Engineering, 86(3), pp. 244-248. (doi:10.1016/j.mee.2008.01.043)

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Abstract

Ga2O3/GdGaO dielectric stacks have been grown on GaAs for MOSFETs. This paper highlights variations in the characteristics of GdGaO as the Gd flux, Ga2O flux and substrate temperature are changed. The growth rate, composition, crystallinity are discussed and the sheet resistance of final MOSFET structures are presented. The Gd compositional variation with depth is examined using Rutherford back scattering (RBS) and electron energy loss spectroscopy (EELS)

Item Type:Articles
Keywords:Dielectric stack, EELS, energy, engineering, field-effect transistors, Ga203/Gdgao, GAAS, Gaas MOSFET, Gdgao, growth, III-V gate dielectric, MBE, MOSFET, MOSFETS, optics, physics, resistance, science, spectroscopy, substrate
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Reid, Mr William and Longo, Dr Paolo and Thayne, Professor Iain and Long, Professor Andrew and Paterson, Dr Gary and Craven, Professor Alan and Stanley, Professor Colin and Holland, Dr Martin
Authors: Holland, M., Longo, P., Paterson, G.W., Reid, W., Long, A., Stanley, C.R., Craven, A.J., Thayne, I.G., and Gregory, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Microelectronic Engineering
Publisher:Elsevier Science
ISSN:0167-9317
Published Online:26 January 2008

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