Benchmarking the Accuracy of PCA Generated Statistical Compact Model Parameters Against Physical Device Simulation and Directly Extracted Statistical Parameters

Cheng, B., Moezi, N., Dideban, D., Roy, G., Roy, S. and Asenov, A. (2009) Benchmarking the Accuracy of PCA Generated Statistical Compact Model Parameters Against Physical Device Simulation and Directly Extracted Statistical Parameters. In: Simulation of Semiconductor Processes and Devices, 2009, San Diego, CA, 9-11th September, 2009, pp. 1-4. ISBN 1946-1569 (doi:10.1109/SISPAD.2009.5290230)

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Abstract

Statistical variability is a major challenge for CMOS scaling and integration. In order to achieve variability aware design, it's critical important to reliably transfer device characteristics statistical variability information into compact models. A PCA based statistical compact modeling strategy is benchmarked against 'atomistic' device simulation and direct statistical parameter extraction strategy. The results indicate that PCA based approach may introduce considerable error in tail of distribution, which in turn may generate pessimistic or optimistic conclusions in statistical circuit simulation

Item Type:Conference Proceedings
Additional Information:SISPAD '09. International Conference on. Print isbn: 9781424439748
Keywords:CMOS, design, device, devices, fluctuations, impact, model, MOSFET, MOSFETs, parameters, principal component analysis, simulation, statistical compact modelling, statistical variability, variability
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Roy, Dr Gareth and Cheng, Dr Binjie and Roy, Professor Scott
Authors: Cheng, B., Moezi, N., Dideban, D., Roy, G., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE
ISBN:1946-1569

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