Analysis of threshold voltage distribution due to random dopants: a 100 000-sample 3-D simulation study

Reid, D., Millar, C., Roy, G., Roy, S. and Asenov, A. (2009) Analysis of threshold voltage distribution due to random dopants: a 100 000-sample 3-D simulation study. IEEE Transactions on Electron Devices, 56(10), pp. 2255-2263. (doi: 10.1109/TED.2009.2027973)

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Abstract

Using the Glasgow "atomistic" simulator, we have performed 3-D statistical simulations of random-dopant-induced threshold voltage variation in state-of-the-art 35- and 13-nm bulk MOSFETs consisting of statistical samples of 10(5) or more microscopically different transistors. Simulation on such an unprecedented scale has been enabled by grid technology, which allows the distribution and the monitoring of very large ensembles on heterogeneous computational grids, as well as the automated handling of large amounts of output data. The results of these simulations show a pronounced asymmetry in the distribution of the MOSFET threshold voltages, which increases with transistor scaling. A comprehensive statistical analysis enabled by the large sample size reveals the origin of this observed asymmetry, provides a detailed insight into the underlying physical processes, and enables the statistical enhancement of simulations of random-dopant-induced threshold voltage variation

Item Type:Articles
Keywords:CMOS, device, devices, engineering, enhancement, impact, intrinsic parameter fluctuations, MOSFET, MOSFETS, numerical simulations, physics, random dopants, simulation, statistical analysis, technologies, technology, threshold, transistor, transistors, variability
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Millar, Dr Campbell and Roy, Dr Gareth and Reid, Mr David and Roy, Professor Scott
Authors: Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Device Modelling Group
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
ISSN (Online):1557-9646
Published Online:18 September 2009

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
421321Meeting the design challenges of the nano CMOS electronicsAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/E003125/1Electronic and Nanoscale Engineering