An accurate statistical analysis of random dopant induced variability in 140,00013nm MOSFETs

Reid, D., Millar, C., Roy, S., Roy, G., Sinnott, R., Stewart, G. and Asenov, A. (2008) An accurate statistical analysis of random dopant induced variability in 140,00013nm MOSFETs. IEEE, pp. 79-80. ISBN 9781424420711 (doi: 10.1109/SNW.2008.5418478)

Abstract

In this paper, we present groundbreaking results of the simulation of 140,000 well scaled 13nm nChannel bulk MOSFETs, each microscopically different in terms of discrete dopant distributions. These devices were simulated using the well established Glasgow 3D drift/diffusion atomistic simulator. In order to undertake simulations of such a magnitude, we have employed advanced grid technology being developed at Glasgow as part of the nanoCMOS project.

• Item Type: Books
• Additional Information: [13th] : June 15-16, 2008 : Hilton Hawaiian Village, Honolulu, Hawaii
• Keywords: MOSFETS, variability
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Millar, Dr Campbell and Reid, Mr David and Roy, Dr Gareth and Roy, Professor Scott and Sinnott, Professor Richard and Asenov, Professor Asen
• Authors: Reid, D., Millar, C., Roy, S., Roy, G., Sinnott, R., Stewart, G., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: 2008 IEEE Silicon Nanoelectronics Workshop
• Publisher: IEEE
• ISBN: 9781424420711