Optical and electrical characterization of a back-thinned CMOS active pixel sensor

Blue, A. , Clark, A., Houston, S., Laing, A., Maneuski, D. , Prydderch, M., Turchetta, R. and O'Shea, V. (2009) Optical and electrical characterization of a back-thinned CMOS active pixel sensor. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 604(1-2), pp. 215-217. (doi: 10.1016/j.nima.2009.01.088)

Abstract

This work will report on the first work on the characterization of a back-thinned Vanilla-a 512×512 (25 μm squared) active pixel sensor (APS). Characterization of the detectors was carried out through the analysis of photon transfer curves to yield a measurement of full well capacity, noise levels, gain constants and linearity. Spectral characterization of the sensors was also performed in the visible and UV regions. A full comparison against non-back-thinned front illuminated Vanilla sensors is included. Such measurements suggest that the Vanilla APS will be suitable for a wide range of applications, including particle physics and biomedical imaging.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: O'Shea, Professor Val and Blue, Dr Andrew and Maneuski, Dr Dima and Laing, Mr Andrew and Houston, Ms Sarah
• Authors: Blue, A., Clark, A., Houston, S., Laing, A., Maneuski, D., Prydderch, M., Turchetta, R., and O'Shea, V.
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
• Publisher: Elsevier B.V.
• ISSN: 0168-9002
• ISSN (Online): 1872-9576
• Published Online: 30 January 2009