Characterisation of HEPAPS4-A family of CMOS active pixel sensors for charged particle detection

Maneuski, D., Eklund, L. , Laing, A., Turchetta, R. and O'Shea, V. (2009) Characterisation of HEPAPS4-A family of CMOS active pixel sensors for charged particle detection. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 604(1-2), pp. 404-407. (doi: 10.1016/j.nima.2009.01.096)

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Abstract

Monolithic active pixel sensor technology is a relatively inexpensive and reliable alternative to that of CCDs. Potential scientific applications for these devices include charged particle detection, indirect X-rays and neutron imaging. This paper reports on the characterisation and timing parameters optimisation of three different sensor variants from the HEPAPS4 family. The sensors feature standard three nMOS design but differ in the implementation of the photosensitive element. They have an array of 1024×384 pixels of and epi-layer. Photonic methods are used to measure conversion gain, linearity, signal to noise ratio, dynamic range, pixel to pixel uniformity, dark current and read noise.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:O'Shea, Professor Val and Laing, Mr Andrew and Maneuski, Dr Dima and Eklund, Professor Lars
Authors: Maneuski, D., Eklund, L., Laing, A., Turchetta, R., and O'Shea, V.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
Publisher:Elsevier B.V.
ISSN:0168-9002
ISSN (Online):1872-9576
Published Online:04 February 2009

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