Maneuski, D. , Eklund, L. , Laing, A., Turchetta, R. and O'Shea, V. (2009) Characterisation of HEPAPS4-A family of CMOS active pixel sensors for charged particle detection. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 604(1-2), pp. 404-407. (doi: 10.1016/j.nima.2009.01.096)
Full text not currently available from Enlighten.
Abstract
Monolithic active pixel sensor technology is a relatively inexpensive and reliable alternative to that of CCDs. Potential scientific applications for these devices include charged particle detection, indirect X-rays and neutron imaging. This paper reports on the characterisation and timing parameters optimisation of three different sensor variants from the HEPAPS4 family. The sensors feature standard three nMOS design but differ in the implementation of the photosensitive element. They have an array of 1024×384 pixels of and epi-layer. Photonic methods are used to measure conversion gain, linearity, signal to noise ratio, dynamic range, pixel to pixel uniformity, dark current and read noise.
Item Type: | Articles |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | O'Shea, Professor Val and Eklund, Prof Lars and Laing, Mr Andrew and Maneuski, Dr Dima |
Authors: | Maneuski, D., Eklund, L., Laing, A., Turchetta, R., and O'Shea, V. |
College/School: | College of Science and Engineering > School of Physics and Astronomy |
Journal Name: | Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment |
Publisher: | Elsevier B.V. |
ISSN: | 0168-9002 |
ISSN (Online): | 1872-9576 |
Published Online: | 04 February 2009 |
University Staff: Request a correction | Enlighten Editors: Update this record