A new analytical method for characterising the bonding environment at rough interfaces in high-k gate stacks using electron energy loss spectroscopy

Mendis, B.G., MacKenzie, M. and Craven, A.J. (2010) A new analytical method for characterising the bonding environment at rough interfaces in high-k gate stacks using electron energy loss spectroscopy. Ultramicroscopy, 110(2), pp. 105-117. (doi:10.1016/j.ultramic.2009.09.013)

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Abstract

Determining the bonding environment at a rough interface, using for example the near-edge fine structure in electron energy loss spectroscopy (EELS), is problematic since the measurement contains information from the interface and surrounding matrix phase. Here we present a novel analytical method for determining the interfacial EELS difference spectrum (with respect to the matrix phase) from a rough interface of unknown geometry, which, unlike multiple linear least squares (MLLS) fitting, does not require the use of reference spectra from suitable standards. The method is based on analysing a series of EELS spectra with variable interface to matrix volume fraction and, as an example, is applied to a TiN/poly-Si interface containing oxygen in a HfO2-based, high-k dielectric gate stack. A silicon oxynitride layer was detected at the interface consistent with previous results based on MLLS fitting.

Item Type:Articles
Keywords:Electron energy loss spectroscopy (EELS), scanning transmission electron microscopy (STEM), spectrum imaging, high-k dielectrics
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:MacKenzie, Dr Maureen and Craven, Professor Alan and Mendis, Dr Budhika
Authors: Mendis, B.G., MacKenzie, M., and Craven, A.J.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Ultramicroscopy
Publisher:Elsevier
ISSN:0304-3991
ISSN (Online):1879-2723
Published Online:26 September 2009
Copyright Holders:Copyright © 2009 Elsevier
First Published:First published in Ultramicroscopy 110(2):105-117
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
350671Chemistry, structure and bonding in high-k gate oxide stacksAlan CravenEngineering & Physical Sciences Research Council (EPSRC)GR/S44280/01Physics and Astronomy
413371SuperSTEM - the UK aberration corrected STEM facilityAlan CravenEngineering & Physical Sciences Research Council (EPSRC)EP/D040205/1Physics and Astronomy