Asenov, A. (2006) A 3D finite element parallel simulator for studying fluctuations in advanced MOSFETs. In: 11th International Workshop on Computational Electronics, IWCE 2006, Vienna, Austria, p. 37.
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| Item Type: | Conference Proceedings |
|---|---|
| Keywords: | Fluctuation, Fluctuations, HEMT, Impact, Interface, Intrinsic Parameter Fluctuations, Model, MOSFET, MOSFETS, Scattering, Simulation |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen |
| Authors: | Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Publisher: | IEEE |
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