Increased intrinsic parameter fluctuations through ab initio Monte Carlo simulations in nano-scaled MOSFETs

Alexander, C., Roy, G. and Asenov, A. (2006) Increased intrinsic parameter fluctuations through ab initio Monte Carlo simulations in nano-scaled MOSFETs. In: International Electron Devices Meeting 2006, IEDM, San Fransisco, CA, USA,

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Item Type:Conference Proceedings
Keywords:Device, Devices, Electron, Fluctuation, Fluctuations, Intrinsic Parameter Fluctuation, Intrinsic Parameter Fluctuations, Monte Carlo, Monte Carlo Simulation, Monte Carlo Simulations, Monte-Carlo-Simulation, MOSFET, MOSFETS, Parameter Fluctuations, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Dr Gareth and Alexander, Dr Craig and Asenov, Professor Asen
Authors: Alexander, C., Roy, G., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE

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