The impact of the interfacial layer and structure of the k dielectric (HfO2) on device performance

Watling, J., Asenov, A., Barker, J. and Roy, S. (2005) The impact of the interfacial layer and structure of the k dielectric (HfO2) on device performance. In: Advanced Gate Stack Engineering Conference, Texas, USA,

Full text not currently available from Enlighten.


Item Type:Conference Proceedings
Keywords:Device, Engineering, Gate, Impact, Layer, Performance
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Roy, Professor Scott and Asenov, Professor Asen
Authors: Watling, J., Asenov, A., Barker, J., and Roy, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

University Staff: Request a correction | Enlighten Editors: Update this record