Watling, J., Asenov, A., Barker, J. and Roy, S. (2005) The impact of the interfacial layer and structure of the k dielectric (HfO2) on device performance. In: Advanced Gate Stack Engineering Conference, Texas, USA,
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Item Type: | Conference Proceedings |
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Keywords: | Device, Engineering, Gate, Impact, Layer, Performance |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Barker, Professor John and Asenov, Professor Asen and Watling, Dr Jeremy and Roy, Professor Scott |
Authors: | Watling, J., Asenov, A., Barker, J., and Roy, S. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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