Electrostatic and transport variations in nano CMOS devices due to variations in high-k oxides

Watling, J., Brown, A., Alexander, C., Ferrari, G., Barker, J., Bersuker, G., Zeitzoff, P. and Asenov, A. (2005) Electrostatic and transport variations in nano CMOS devices due to variations in high-k oxides. In: 2nd International Workshop on Advanced Gate Stack Technology, Texas, USA,

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Item Type:Conference Proceedings
Keywords:2nd, CMOS, Device, Devices, Gate, High-K, Oxide, Technology, Transport
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Brown, Mr Andrew and Alexander, Dr Craig and Watling, Dr Jeremy and Asenov, Professor Asen
Authors: Watling, J., Brown, A., Alexander, C., Ferrari, G., Barker, J., Bersuker, G., Zeitzoff, P., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:SEMATECH

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