Impact of stray charges on the characteristics of nano-DGMOSFETs in the ballistic regime: A NEGF simulation study

Martinez, A., Svizhenko, A., Anantram, M., Barker, J., Brown, A., Biegel, B. and Asenov, A. (2005) Impact of stray charges on the characteristics of nano-DGMOSFETs in the ballistic regime: A NEGF simulation study. In: Silicon Nanoelectronics Workshop 2005, Kyoto, Japan, pp. 76-77.

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Item Type:Conference Proceedings
Keywords:Charge, Impact, Silicon, Simulation, Stray Charges
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Brown, Mr Andrew and Asenov, Professor Asen and Martinez, Dr Antonio
Authors: Martinez, A., Svizhenko, A., Anantram, M., Barker, J., Brown, A., Biegel, B., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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