The impact of unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFETS: Classical to full quantum simulation

Martinez, A., Barker, J., Svizhenko, A., Anantram, M., Brown, A., Biegel, B. and Asenov, A. (2005) The impact of unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFETS: Classical to full quantum simulation. In: New Phenomena in Mesoscopic Structures - 7 (NPMS) and the fifth in the series of Surfaces and Interfaces of Mesoscopic Devices (SIMD), NPMS-7/SIMD-5, Maui, Hawaii,

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Item Type:Conference Proceedings
Keywords:Body, Channel, Charge, Device, Devices, Double Gate MOSFET, Fluctuations, Gate, Impact, Interface, Interfaces, Intrinsic Parameter Fluctuation, MOSFET, MOSFETS, Parameter Fluctuations, Quantum, Simulation, Surface, Surfaces
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Brown, Mr Andrew and Asenov, Professor Asen and Martinez, Dr Antonio
Authors: Martinez, A., Barker, J., Svizhenko, A., Anantram, M., Brown, A., Biegel, B., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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