A 2D-NEGF quantum transport study of unintentional charges in a double gate nanotransistor

Martinez, A., Barker, J., Svizhenko, A., Bescond, M., Anantram, M. and Asenov, A. (2005) A 2D-NEGF quantum transport study of unintentional charges in a double gate nanotransistor. In: 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors - HCIS, Chicago, USA,

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Item Type:Conference Proceedings
Keywords:Charge, Dynamics, Gate, MOSFETS, Quantum, Quantum Transport, Semiconductor, Semiconductors, Transport
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Asenov, Professor Asen and Martinez, Dr Antonio
Authors: Martinez, A., Barker, J., Svizhenko, A., Bescond, M., Anantram, M., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IOP PUBLISHING LTD, DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND

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