Martinez, A., Svizhenko, A., Anantram, M., Barker, J., Brown, A. and Asenov, A. (2005) A study of the effect of interface roughness on DG MOSFET using full 2D NEGF technique. In: IEEE International Electron Device Meeting, Washington DC, USA, pp. 627-630.
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Item Type: | Conference Proceedings |
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Keywords: | Device, Dg-MOSFET, Electron, Interface, Interface Roughness, MOSFET |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Barker, Professor John and Brown, Mr Andrew and Asenov, Professor Asen and Martinez, Dr Antonio |
Authors: | Martinez, A., Svizhenko, A., Anantram, M., Barker, J., Brown, A., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Publisher: | IEEE |
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