A study of the effect of interface roughness on DG MOSFET using full 2D NEGF technique

Martinez, A., Svizhenko, A., Anantram, M., Barker, J., Brown, A. and Asenov, A. (2005) A study of the effect of interface roughness on DG MOSFET using full 2D NEGF technique. In: IEEE International Electron Device Meeting, Washington DC, USA, pp. 627-630.

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Item Type:Conference Proceedings
Keywords:Device, Dg-MOSFET, Electron, Interface, Interface Roughness, MOSFET
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Brown, Mr Andrew and Asenov, Professor Asen and Martinez, Dr Antonio
Authors: Martinez, A., Svizhenko, A., Anantram, M., Barker, J., Brown, A., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE

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