Fermi-dirac statistics in Monte Carlo simulations of InGaAs MOSFETs

Kalna, K., Yang, L. and Asenov, A. (2005) Fermi-dirac statistics in Monte Carlo simulations of InGaAs MOSFETs. In: 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors - HCIS, Chicago, USA,

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Item Type:Conference Proceedings
Keywords:Dynamics, Gate, INGAAS, Monte Carlo, Monte Carlo Simulation, Monte Carlo Simulations, Monte-Carlo-Simulation, MOSFET, MOSFETS, Semiconductor, Semiconductors, Simulation, Transport
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Kalna, Dr Karol
Authors: Kalna, K., Yang, L., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IOP PUBLISHING LTD, DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND

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