Kalna, K., Yang, L. and Asenov, A. (2005) Monte Carlo simulation of sub-100nm InGaAs MOSFETs for digital applications. In: European Solid-State Device Research Conference 2005 - ESSDERC2005, Grenoble, France,
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| Item Type: | Conference Proceedings |
|---|---|
| Keywords: | Device, Fluctuations, INGAAS, Intrinsic Parameter Fluctuation, Monte Carlo, Monte Carlo Simulation, Monte-Carlo-Simulation, MOSFET, MOSFETS, Parameter Fluctuations, Simulation |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Kalna, Dr Karol |
| Authors: | Kalna, K., Yang, L., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Publisher: | IEEE |
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