Modelling of InPHEMTs with high indium content channels

Kalna, K., Elgaid, K., Thayne, I. and Asenov, A. (2005) Modelling of InPHEMTs with high indium content channels. In: 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALSConference proceedings - indium phosphide and related materials, NEW YORK, pp. 192-195. ISBN 1092-8669

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Item Type:Conference Proceedings
Keywords:Channel, Channels, Decanano Dimensions, Electron-Mobility Transistors, F(T), HEMTS, Inphemts, Monte-Carlo-Simulation, PHEMTS
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Elgaid, Dr Khaled and Asenov, Professor Asen and Kalna, Dr Karol
Authors: Kalna, K., Elgaid, K., Thayne, I., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE
ISBN:1092-8669

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