Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-kappa gate stack materials

Brown, A., Watling, J., Asenov, A., Bersuker, G. and Zeitzoff, P. (2005) Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-kappa gate stack materials. In: SISPAD: 2005 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, TOKYO, pp. 27-30.

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Item Type:Conference Proceedings
Keywords:Device, Devices, Dielectrics, Fluctuation, Fluctuations, Gate, High-Kappa, Intrinsic Parameter Fluctuation, Intrinsic Parameter Fluctuations, Model, MOSFET, MOSFETS, Parameter Fluctuations, Phase, Semiconductor, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Brown, Mr Andrew and Watling, Dr Jeremy and Asenov, Professor Asen
Authors: Brown, A., Watling, J., Asenov, A., Bersuker, G., and Zeitzoff, P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:JAPAN SOCIETY APPLIED PHYSICS

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