Brown, A., Watling, J., Asenov, A., Bersuker, G. and Zeitzoff, P. (2005) Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-kappa gate stack materials. In: SISPAD: 2005 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, TOKYO, pp. 27-30.
Full text not currently available from Enlighten.
Item Type: | Conference Proceedings |
---|---|
Keywords: | Device, Devices, Dielectrics, Fluctuation, Fluctuations, Gate, High-Kappa, Intrinsic Parameter Fluctuation, Intrinsic Parameter Fluctuations, Model, MOSFET, MOSFETS, Parameter Fluctuations, Phase, Semiconductor, Simulation |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Brown, Mr Andrew and Watling, Dr Jeremy and Asenov, Professor Asen |
Authors: | Brown, A., Watling, J., Asenov, A., Bersuker, G., and Zeitzoff, P. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Publisher: | JAPAN SOCIETY APPLIED PHYSICS |
University Staff: Request a correction | Enlighten Editors: Update this record