Bescond, M., Cavassilas, N., Kalna, K., Autran, J., Lannoo, M. and Asenov, A. (2005) Simulation study of performance limits for Si, Ge, GaAs ballistic nanowire MOSFETs. In: Silicon Nanoelectronics Workshop 2005, Kyoto, Japan, pp. 8-9.
Full text not currently available from Enlighten.
Item Type: | Conference Proceedings |
---|---|
Keywords: | GAAS, Limit, Limits, MOSFET, MOSFETS, Nanowire MOSFET, Performance, Si, Silicon, Simulation |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Kalna, Dr Karol |
Authors: | Bescond, M., Cavassilas, N., Kalna, K., Autran, J., Lannoo, M., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
University Staff: Request a correction | Enlighten Editors: Update this record