Simulation study of performance limits for Si, Ge, GaAs ballistic nanowire MOSFETs

Bescond, M., Cavassilas, N., Kalna, K., Autran, J., Lannoo, M. and Asenov, A. (2005) Simulation study of performance limits for Si, Ge, GaAs ballistic nanowire MOSFETs. In: Silicon Nanoelectronics Workshop 2005, Kyoto, Japan, pp. 8-9.

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Item Type:Conference Proceedings
Keywords:GAAS, Limit, Limits, MOSFET, MOSFETS, Nanowire MOSFET, Performance, Si, Silicon, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Kalna, Dr Karol
Authors: Bescond, M., Cavassilas, N., Kalna, K., Autran, J., Lannoo, M., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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