Bescond, M., Cavassilas, N., Nehari, K., Autran, J., Lannoo, M. and Asenov, A. (2005) Impact of point defects in nanowire silicon MOSFETs. In: European Solid-State Device Research Conference 2005 - ESSDERC2005, Grenoble, France,
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Item Type: | Conference Proceedings |
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Keywords: | Defect, Device, Fluctuations, Impact, Intrinsic Parameter Fluctuation, MOSFET, MOSFETS, Parameter Fluctuations, Silicon, Simulation |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen |
Authors: | Bescond, M., Cavassilas, N., Nehari, K., Autran, J., Lannoo, M., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Publisher: | IEEE |
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