Impact of point defects in nanowire silicon MOSFETs

Bescond, M., Cavassilas, N., Nehari, K., Autran, J., Lannoo, M. and Asenov, A. (2005) Impact of point defects in nanowire silicon MOSFETs. In: European Solid-State Device Research Conference 2005 - ESSDERC2005, Grenoble, France,

Full text not currently available from Enlighten.


Item Type:Conference Proceedings
Keywords:Defect, Device, Fluctuations, Impact, Intrinsic Parameter Fluctuation, MOSFET, MOSFETS, Parameter Fluctuations, Silicon, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen
Authors: Bescond, M., Cavassilas, N., Nehari, K., Autran, J., Lannoo, M., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE

University Staff: Request a correction | Enlighten Editors: Update this record