Ballistic transport in Si, Ge and GaAs Nanowire MOSFETs

Bescond, M., Cavassilas, N., Kalna, K., Nehari, K., Raymond, L., Autran, J., Lanu, M. and Asenov, A. (2005) Ballistic transport in Si, Ge and GaAs Nanowire MOSFETs. In: IEEE International Electron Device Meeting, Washington DC, USA, pp. 533-536.

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Item Type:Conference Proceedings
Keywords:Device, Electron, GAAS, MOSFET, MOSFETS, Nanowire MOSFET, Si, Transport
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Kalna, Dr Karol
Authors: Bescond, M., Cavassilas, N., Kalna, K., Nehari, K., Raymond, L., Autran, J., Lanu, M., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE

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