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Scaling study of Si and strained Si n-MOSFETs with different high k gate stacks

Yang, L., Watling, J., Adamu-Lema, F., Asenov, A. and Barker, J. (2004) Scaling study of Si and strained Si n-MOSFETs with different high k gate stacks. In: IEEE International Electron Devices Meeting, San Francisco, USA,

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Item Type:Conference Proceedings
Keywords:Device, Devices, Electron, Gate, N-MOSFETS, Scaling, Si, Stacks, Strained Si, Strained-Si
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Asenov, Professor Asen
Authors: Yang, L., Watling, J., Adamu-Lema, F., Asenov, A., and Barker, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE

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