Mobility and device performance in conventional and strained Si MOSFETs with high-k stack

Yang, L., Watling, J., Asenov, A., Barker, J. and Roy, S. (2004) Mobility and device performance in conventional and strained Si MOSFETs with high-k stack. In: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Munich, Germany, pp. 199-202.

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Item Type:Conference Proceedings
Keywords:Device, Devices, High-K, Mobility, MOSFET, MOSFETS, Performance, Semiconductor, Si, Simulation, Strained Si, Strained-Si
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Roy, Professor Scott and Asenov, Professor Asen
Authors: Yang, L., Watling, J., Asenov, A., Barker, J., and Roy, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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