Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100nm n-MOSFETs

Watling, J., Yang, L., Asenov, A., Barker, J. and Roy, S. (2004) Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100nm n-MOSFETs. In: International workshop on electrical characterization and reliability of high-k devices, Austin, USA,

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Item Type:Conference Proceedings
Keywords:Device, Devices, Impact, Mobility, N-MOSFETS, Performance
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Roy, Professor Scott and Asenov, Professor Asen
Authors: Watling, J., Yang, L., Asenov, A., Barker, J., and Roy, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:International SEMATECH

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