50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using non-annealed ohmic contact process

Moran, D., Boyd, E., Elgaid, K., McLelland, H., Stanley, C. and Thayne, I. (2004) 50nm T-gate lattice-matched InP HEMTs with fT of 430GHz using non-annealed ohmic contact process. In: European Gallium Arsenide and other Compound Semiconductors Application Symposium,GaAs 2004, Amsterdam, The Netherlands,

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Item Type:Conference Proceedings
Keywords:Compound Semiconductor, Fabrication, GAAS, HEMT, HEMTS, INP, Inp HEMTS, Non-Annealed, Semiconductor, Semiconductors
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and McLelland, Mrs Helen and Stanley, Professor Colin and Moran, Dr David and Elgaid, Dr Khaled
Authors: Moran, D., Boyd, E., Elgaid, K., McLelland, H., Stanley, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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