Surface mass spectrometric analysis of SiCl4/SiF4/O2 dry-etch gate recessed 120nm T-gate HEMTs

Li, X., Elgaid, K., McLelland, H. and Thayne, I. (2004) Surface mass spectrometric analysis of SiCl4/SiF4/O2 dry-etch gate recessed 120nm T-gate HEMTs. In: Microelectronic and Nanoelectronic Engineering 2004, Rotterdam, The Netherlands,

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Item Type:Conference Proceedings
Keywords:Engineering, Gate, HEMT, HEMTS, Surface
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and McLelland, Mrs Helen and Li, Dr Xiang and Elgaid, Dr Khaled
Authors: Li, X., Elgaid, K., McLelland, H., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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